Cree, manufacturer of products for the solid-state lighting market, has announced the opening of its new 230,000-square-foot engineering and production facility in North Carolina, where electronic devices based on silicon carbide (SiC) and gallium nitride (GaN) will be produced. According to the manufacturer, the site will be one of the first commercial SiC and GaN production facilities in the world devoted to serving the power and wireless infrastructure markets. For more information, visit
www.cree.com.
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